Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing

Qianlong Kang; Zhen Wang; Guangjian Wu; Congwei Tan; Tiange Zhao; Hangyu Xu

doi:10.1088/1674-4926/26101001

J. Semicond. > In Press

EDITORIAL

Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing

Qianlong Kang^1,, Zhen Wang^1,, Guangjian Wu^2,, Congwei Tan^3,, Tiange Zhao^1, and Hangyu Xu^1,

+ Author Affiliations

1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
2. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
3. School of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

Author Bio:

Qianlong Kang received his Ph.D. degree in Hefei University of Technology, Hefei, China, in 2024, and B.S. degree in School of Physics and Electronic Engineering, Fuyang Normal University, Fuyang, China, in 2018. He is currently a post-doctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on the infrared photoelectrical transient response, artificial micro-structure enhanced infrared detectors and infrared stealth.

Zhen Wang received his Ph.D. degree in condensed matter physics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China, in 2020, and B.S. degree in material physics from Hubei University, Wuhan, China, in 2015. He is currently an associate professor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research focuses on the growth of low-dimensional materials (nanowires and two-dimensional materials), infrared photodetectors, and biomedical applications (optical neuromodulation).

Guangjian Wu received his B.S. and Ph.D. degrees from Nanjing University, Nanjing, China. He is currently a Young Investigator and Ph.D. supervisor in Prof. Jianlu Wang's group at Fudan University, Shanghai, China. His research focuses on novel semiconductor optoelectronic devices and chips, highly sensitive broadband intelligent-sensing photodetectors, and intelligent image recognition systems.

Congwei Tan received his B.S. degree in physics from Shaanxi Normal University, Xian, China, in 2015, and Ph.D. degree in physical chemistry from Peking University, Beijing, China, in 2020. After a postdoctoral study at Peking University from 2020 to 2024, he became an associate researcher (2024) at Peking University. Currently, his research interests focus on the synthesis and device applications of high-mobility 2D materials.

Tiange Zhao received his Ph.D. degree in Materials physics and Chemistry from Sun Yat-sen University, Guangzhou, China, in 2023, and B.S. degree in Materials Science and Engineering from Zhengzhou University, Henan, China, in 2014. He is currently an assistant researcher in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on 2D materials synthesis and integration for optoelectronic applications.

Hangyu Xu received his Ph.D. degree in Microelectronics and Solid State Electronics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China, in 2025, and B.S. degree in Electronic Science and Technology from University of Electronic Science and Technology of China, China, in 2019. He is currently a post-doctor in Pro. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His main research interest is focused on multidimensional intelligent sensing based on low dimensional materials.

Corresponding author: Qianlong Kang, kangqianlong@mail.sitp.ac.cn; Zhen Wang, wangzhen@mail.sitp.ac.cn; Guangjian Wu, gjwu@fudan.edu.cn; Congwei Tan, tancw-cnc@pku.edu.cn; Tiange Zhao, zhaotiange@mail.sitp.ac.cn; Hangyu Xu, xuhangyu@mail.sitp.ac.cn

DOI: 10.1088/1674-4926/26101001CSTR: 32376.14.1674-4926.26101001

References

[1]	Li W, Zhang W, Kong L Y, et al. Ferroelectric α-Bi₂O₃ films derived from β-Bi via ultraviolet ozone oxidation. J Semicond, 2026, 47(10): 102701 doi: 10.1088/1674-4926/26070002
[2]	Guo S, Yang T F, Xie M Y, et al. In situ visualized synthesis of two-dimensional MoS₂ with tunable metal-to-semiconductor transition. J Semicond, 2026, 47(10): 102705 doi: 10.1088/1674-4926/26060017
[3]	Chen L S, Long H R, Wu H, et al. Anomalous gate-tunable capacitance in Van der Waals heterostructures. J Semicond, 2026, 47(10): 102706 doi: 10.1088/1674-4926/26040034
[4]	Lv Z X, Zhang S, Yang M J et al. A photolithography-compatible method for transferring full-device constituents on silicon substrate. J Semicond, 2026, 47(10): 102709 doi: 10.1088/1674-4926/26080030
[5]	Yu M S, Hu Q, Wu M Q, et al. Epitaxial growth of single-crystal CdZnTe films on GaAs (001) substrate with ZnTe buffer layer. J Semicond, 2026, 47(10): 102702 doi: 10.1088/1674-4926/26060024
[6]	Gao J T, Liu H Y, Zhang Y, et al. Ultrathin single-crystalline Bi₂S₃ nanosheets for high-performance photodetectors. J Semicond, 2026, 47(10): 102703 doi: 10.1088/1674-4926/26060011
[7]	Ma X J, Wang Z F, Chen C, et al. Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition. J Semicond, 2026, 47(10): 102708 doi: 10.1088/1674-4926/26080022
[8]	Liu X, Fu H R, Zhao T G, et al. Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection. J Semicond, 2026, 47(10): 102704 doi: 10.1088/1674-4926/26060015
[9]	Zhang Y L, Li T X, Pei Y X, et al. Broadband gate-reconfigurable infrared sensing based on a b-As_0.3P_0.7/MoS₂ heterojunction. J Semicond, 2026, 47(10): 102707 doi: 10.1088/1674-4926/26060028
[10]	Yu Y F, Gong J X, Tang S Y, et al. Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration. J Semicond, 2026, 47(10): 101701 doi: 10.1088/1674-4926/26060030
[11]	Xu Z H, Luo Y J, Yau A, et al. Low-dimensional perovskite optoelectronic synapses for neuromorphic vision. J Semicond, 2026, 47(10): 101702 doi: 10.1088/1674-4926/26060035

[1]	Li W, Zhang W, Kong L Y, et al. Ferroelectric α-Bi₂O₃ films derived from β-Bi via ultraviolet ozone oxidation. J Semicond, 2026, 47(10): 102701 doi: 10.1088/1674-4926/26070002
[2]	Guo S, Yang T F, Xie M Y, et al. In situ visualized synthesis of two-dimensional MoS₂ with tunable metal-to-semiconductor transition. J Semicond, 2026, 47(10): 102705 doi: 10.1088/1674-4926/26060017
[3]	Chen L S, Long H R, Wu H, et al. Anomalous gate-tunable capacitance in Van der Waals heterostructures. J Semicond, 2026, 47(10): 102706 doi: 10.1088/1674-4926/26040034
[4]	Lv Z X, Zhang S, Yang M J et al. A photolithography-compatible method for transferring full-device constituents on silicon substrate. J Semicond, 2026, 47(10): 102709 doi: 10.1088/1674-4926/26080030
[5]	Yu M S, Hu Q, Wu M Q, et al. Epitaxial growth of single-crystal CdZnTe films on GaAs (001) substrate with ZnTe buffer layer. J Semicond, 2026, 47(10): 102702 doi: 10.1088/1674-4926/26060024
[6]	Gao J T, Liu H Y, Zhang Y, et al. Ultrathin single-crystalline Bi₂S₃ nanosheets for high-performance photodetectors. J Semicond, 2026, 47(10): 102703 doi: 10.1088/1674-4926/26060011
[7]	Ma X J, Wang Z F, Chen C, et al. Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition. J Semicond, 2026, 47(10): 102708 doi: 10.1088/1674-4926/26080022
[8]	Liu X, Fu H R, Zhao T G, et al. Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection. J Semicond, 2026, 47(10): 102704 doi: 10.1088/1674-4926/26060015
[9]	Zhang Y L, Li T X, Pei Y X, et al. Broadband gate-reconfigurable infrared sensing based on a b-As_0.3P_0.7/MoS₂ heterojunction. J Semicond, 2026, 47(10): 102707 doi: 10.1088/1674-4926/26060028
[10]	Yu Y F, Gong J X, Tang S Y, et al. Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration. J Semicond, 2026, 47(10): 101701 doi: 10.1088/1674-4926/26060030
[11]	Xu Z H, Luo Y J, Yau A, et al. Low-dimensional perovskite optoelectronic synapses for neuromorphic vision. J Semicond, 2026, 47(10): 101702 doi: 10.1088/1674-4926/26060035

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History

Received: 15 October 2026 Revised: Online: Accepted Manuscript: 16 October 2026Uncorrected proof: 16 October 2026

Article Navigation > Journal of Semiconductors > 2026 > Uncorrected proof

Qianlong Kang, Zhen Wang, Guangjian Wu, Congwei Tan, Tiange Zhao, Hangyu Xu. Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26101001 ****Q L Kang, Z Wang, G J Wu, C W Tan, T G Zhao, and H Y Xu, Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing[J]. J. Semicond., 2026, 47(10): 100101 doi: 10.1088/1674-4926/26101001

Citation:

Q L Kang, Z Wang, G J Wu, C W Tan, T G Zhao, and H Y Xu, Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing[J]. J. Semicond., 2026, 47(10): 100101 doi: 10.1088/1674-4926/26101001

Citation:

PDF( 1514 KB)

Preface to the Focus Issue on Low-Dimensional Optoelectronic Chips and Integrated Intelligent Sensing

DOI: 10.1088/1674-4926/26101001

CSTR: 32376.14.1674-4926.26101001

1.
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
2.
Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
3.
School of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

More Information

Qianlong Kang received his Ph.D. degree in Hefei University of Technology, Hefei, China, in 2024, and B.S. degree in School of Physics and Electronic Engineering, Fuyang Normal University, Fuyang, China, in 2018. He is currently a post-doctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on the infrared photoelectrical transient response, artificial micro-structure enhanced infrared detectors and infrared stealth
Zhen Wang received his Ph.D. degree in condensed matter physics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China, in 2020, and B.S. degree in material physics from Hubei University, Wuhan, China, in 2015. He is currently an associate professor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research focuses on the growth of low-dimensional materials (nanowires and two-dimensional materials), infrared photodetectors, and biomedical applications (optical neuromodulation)
Guangjian Wu received his B.S. and Ph.D. degrees from Nanjing University, Nanjing, China. He is currently a Young Investigator and Ph.D. supervisor in Prof. Jianlu Wang's group at Fudan University, Shanghai, China. His research focuses on novel semiconductor optoelectronic devices and chips, highly sensitive broadband intelligent-sensing photodetectors, and intelligent image recognition systems
Congwei Tan received his B.S. degree in physics from Shaanxi Normal University, Xian, China, in 2015, and Ph.D. degree in physical chemistry from Peking University, Beijing, China, in 2020. After a postdoctoral study at Peking University from 2020 to 2024, he became an associate researcher (2024) at Peking University. Currently, his research interests focus on the synthesis and device applications of high-mobility 2D materials
Tiange Zhao received his Ph.D. degree in Materials physics and Chemistry from Sun Yat-sen University, Guangzhou, China, in 2023, and B.S. degree in Materials Science and Engineering from Zhengzhou University, Henan, China, in 2014. He is currently an assistant researcher in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on 2D materials synthesis and integration for optoelectronic applications
Hangyu Xu received his Ph.D. degree in Microelectronics and Solid State Electronics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China, in 2025, and B.S. degree in Electronic Science and Technology from University of Electronic Science and Technology of China, China, in 2019. He is currently a post-doctor in Pro. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His main research interest is focused on multidimensional intelligent sensing based on low dimensional materials
Corresponding author: kangqianlong@mail.sitp.ac.cn; wangzhen@mail.sitp.ac.cn; gjwu@fudan.edu.cn; tancw-cnc@pku.edu.cn; zhaotiange@mail.sitp.ac.cn; xuhangyu@mail.sitp.ac.cn
Received Date: 2026-10-15
Available Online: 2026-10-16

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